FOR IMMEDIATE RELEASE No. 3372
TOKYO, September 15, 2020 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a newly developed SiC chip for industrial use. The low power loss characteristics and high carrier frequency operation1 of the SiC-MOSFET (metal oxide semiconductor field-effect transistor) and SiC-SBD (schottky barrier diode) chips in the modules are expected to facilitate the development of more efficient, smaller and lighter weight power equipment in various industrial fields. Sales will start in January, 2021.
1200V/600A, 800A 2 in 1 1700V/300A 2 in 1, chopper RTC circuit embedded
1200V/300A, 400A 4 in 1 RTC circuit embedded
1200V/1200A 2 in 1 RTC circuit embedded
1200V/400A 4 in 1 1200V/800A 2 in 1
Note that the press releases are accurate at the time of publication but may be subject to change without notice.