FOR IMMEDIATE RELEASE No. 3323
TOKYO, December 12, 2019 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that its lineup of gallium-nitride high-electron-mobility transistors (GaN-HEMTs) for satellite-communication (SATCOM) earth stations will be expanded with the addition of new Ku-band (12-18GHz) 70W and 100W GaN-HEMTs suitable for multi-carrier applications. The 70W-model GaN-HEMT achieves low third-order intermodulation distortion (IMD3)* with a wide offset frequency** of up to 400MHz, which is believed to be the industry's highest level, while the 100W-model GaN HEMT combines unmatched power output with low IMD3 and an offset frequency of up to 200MHz. Mitsubishi Electric will begin shipping samples of both models on January 15.
GaN HEMTs for Ku-band SATCOM earth stations
Left: MGFK50G3745A (100W) Right: MGFK48G3745A (70W)
The demands for Ku-band satellite communications and satellite news-gathering (SNG) are rapidly growing to support communications during natural disasters and in rural areas where the installation of cable network equipment is difficult. In addition, increasingly large-capacity, high-speed communications have expanded needs for both multi-carrier and single-carrier satellite communications. Mitsubishi Electric's new GaN HEMTs are expected to accelerate the realization of smaller earth stations as well as faster and larger-capacity communications for various needs.
|Up to 400MHz
|Jan. 15, 2020
|Up to 200MHz
Note that the press releases are accurate at the time of publication but may be subject to change without notice.