FOR IMMEDIATE RELEASE No. 3307
TOKYO, September 30, 2019 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a trench-type*1 silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) with a unique electric-field-limiting structure for a power semiconductor device that achieves a world-leading*2 specific on-resistance of 1.84 mΩ (milliohms) cm2 and a breakdown voltage of over 1,500 V. Mounting the transistor in power semiconductor modules for power electronic equipment will lead to energy savings and equipment downsizing. After improving the performance and confirming the long-term reliability of its new power semiconductor devices, Mitsubishi Electric expects to put its new trench-type SiC-MOSFET into practical use sometime after the fiscal year beginning in 2021.
Mitsubishi Electric announced its new trench-type SiC-MOSFET today at the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, which is being held at the Kyoto International Conference Center in Japan from September 29 to October 4.
Fig. Cross-sectional view of conventional planar SiC-MOSFET (left) and new trench SiC-MOSFET (right)
Note that the press releases are accurate at the time of publication but may be subject to change without notice.